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FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET
October 2006
FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET
-12V, -6A, 18m Features General Description
This P-Channel -1.8V specified MOSFET uses Fairchild Semiconductor's advanced low voltage PowerTrench(R). It has been optimized for battery power management applications. Max rDS(on) = 18m at VGS = -4.5V, ID = -6A Max rDS(on) = 22m at VGS = -2.5V, ID = -5A Max rDS(on) = 30m at VGS = -1.8V, ID = -4A Low gate charge High performance trench technology for extremely low rDS(on) Low profile TSSOP-8 package RoHS compliant
Application
Power management Load switch Battery protection
TSSOP8
Pin 1
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation-Dual Operation Power Dissipation-Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Parameter Ratings -12 8 -6 -30 2 1.6 1 -55 to +150 C W Units V V A
Thermal Characteristics
RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 80 125 C/W
Package Marking and Ordering Information
Device Marking 2508PB Device FDW2508PB Package TSSOP-8 Reel Size 13'' Tape Width 12mm Quantity 2500 units
(c)2006 Fairchild Semiconductor Corporation FDW2508PB Rev.B
1
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FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -10V VGS = 0V TJ = 125C VGS = 8V, VDS = 0V -12 -12 -1 -100 100 V mV/C A nA
On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -6A Static Drain to Source On-Resistance VGS = -2.5V, ID = -5A VGS = -1.8V, ID = -4A VGS = -4.5V, ID = -6A,TJ = 125C Forward Transconductance VDS = -5V, ID = -6A -0.4 -0.6 3 15 18 22 23 35 18 22 30 30 S m -1.5 V mV/C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -6V, VGS = 0V, f = 1MHz 2835 440 370 3775 590 555 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = -4.5V ,VDD = -6V ID = -6A VDD = -6V, ID = -6A VGS = -4.5V, RGEN = 6 8 16 254 106 32 4.3 7.1 16 29 407 170 45 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.1A
(Note 2)
-0.6 106 110
-1.2 159 165
V ns nC
IF = -6A, di/dt = 100A/s
Notes: 1: RJA is the sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drian pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. RJA is 80C/W(steady state) when mounted on a 1 in2 pad of 2 oz copper. b.RJA is 125C/W(steady state) when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
FDW2508PB Rev.B
2
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FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
30
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
4.5
VGS = -4.5V VGS = -2.5V VGS = -1.8V VGS = -1.5V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
24 18 12 6 0 0.0
VGS = -1.5V
VGS = -4.5V VGS = -1.8V VGS = -2.5V
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V)
5
10 15 20 -ID, DRAIN CURRENT(A)
25
30
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
40
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)
ID = -6A
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8 0.6 -50
ID = -6A VGS = -4.5V
35 30 25 20 15 10 1.5
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
-25
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC)
150 150
3.0 4.5 6.0 -VGS, GATE TO SOURCE VOLTAGE (V)
7.5
Figure 3. Normalized On Resistance vs Junction Temperature
30
-IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
40
VGS = 0V
-ID, DRAIN CURRENT (A)
25 20 15 10 5
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
10
TJ = 150oC
1
TJ = 25oC
TJ = 150oC TJ = 25oC TJ = -55oC
TJ = -55oC
0.1
0 0.5
1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V)
2.0
0.01 0.2
0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDW2508PB Rev.B
3
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FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
4.5 4.0
CAPACITANCE (pF)
10
4
Ciss
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 35
VDD = -8V VDD = -4V VDD = -6V
10
3
Coss
Crss
f = 1MHz VGS = 0V
10 0.1
2
1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
P(PK), PEAK TRANSIENT POWER (W)
100
-ID, DRAIN CURRENT (A)
200 100
VGS = -8V
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125
10 1 0.1 0.01 1E-3 0.1
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
SINGLE PULSE TJ = MAX RATED TA = 25OC
1ms 10ms 100ms 1s DC
10
SINGLE PULSE
1
10
30
1 -3 10
10
-2
-VDS, DRAIN to SOURCE VOLTAGE (V)
10 10 10 t, PULSE WIDTH (s)
-1
0
1
10
2
10
3
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA
DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
0.01
SINGLE PULSE
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
1E-3 -3 10
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
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FDW2508PB Rev.B
4
FDW2508PB Dual P-Channel -1.8V Specified PowerTrench(R) MOSFET
FDW2508PB Rev.B
5
www.fairchildsemi.com
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I22

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